BSP52T1,T3 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
BSP52T1,T3
|
|
حجم فایل
|
135.741
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
4
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Darlington Transistors
-
Datasheet:
onsemi SBSP52T1G
-
Transistor Type:
NPN
-
Operating Temperature:
-65°C~+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
800mW
-
Transition frequency (fT):
-
-
DC current gain (hFE@Vce,Ic):
2000@10V,500mA
-
Collector-emitter voltage (Vceo):
80V
-
Collector cut-off current (Icbo@Vcb):
10uA
-
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
1.3V@500mA,500uA
-
Package:
SOT-223
-
Manufacturer:
onsemi
-
Series:
*
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
Base Part Number:
BSP52
-
detail:
Bipolar (BJT) Transistor